PART |
Description |
Maker |
0809LD120 |
120 Watt / 28V / 1 Ghz LDMOS FET 120 WATT 28V 1 GHz LDMOS FET 120 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC] NEC Corp.
|
TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
PTFA211801E PTFA211801E-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|